DZ23-series www.vishay.com vishay semiconductors rev. 2.0, 08-nov-16 1 document number: 85765 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 small signal zener diodes, dual features ? dual silicon planar zener diodes, common cathode ? the zener voltages are graded according to the international e24 standard. standard zener voltage tolerance is 5 %. ? the parameters are valid for both diodes in one case. ? v z and ? r zj of the two diodes in one case is ? 5 % ? aec-q101 qualified available ? esd capability according to aec-q101: ? human body model > 8 kv ? machine model > 800 v ? base p/n-e3 - rohs-compliant, commercial grade ? base p/n-he3 - rohs-compliant, aec-q101 qualified ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 primary characteristics parameter value unit v z range nom. 2.7 to 51 v test current i zt 5ma v z specification pulse current int. construction dual common cathode 1 3 2 available ordering information device name ordering code taped units per reel minimum order quantity DZ23-series DZ23c2v7-e3-08 to DZ23c51-e3-08 3000 (8 mm tape on 7" reel) 15 000 DZ23c2v7-he3-08 to DZ23c51-he3-08 DZ23c2v7-e3-18 to DZ23c51-e3-18 10 000 (8 mm tape on 13" reel) 10 000 DZ23c2v7-he3-18 to DZ23c51-he3-18 package package name weight molding compound flammability rating moisture sensitivity level soldering conditions sot-23 8.8 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit power di ssipation de v ice on fi b erglass su b strate, see layout on page 6 p tot 300 mw thermal resistance, ? junction to ambient air de v ice on fi b erglass su b strate, see layout on page 6 r thja 420 k/w junction temperature t j 150 c storage temperature range t stg -65 to +150 c operating temperature range t op -55 to +150 c zener current i z p tot /v z ma
DZ23-series www.vishay.com vishay semiconductors rev. 2.0, 08-nov-16 2 document number: 85765 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) tested with pulses t p = 5 ms ? ? electrical characteristics (t amb = 25 c, unless otherwise specified) part number marking code zener voltage range (1) test current reverse voltage dynamic resistance f = 1 khz temperature coefficient of zener voltage v z at i zt1 i zt1 i zt2 v r at i r z z at i zt1 z zk at i zt2 ? vz at i zt1 v ma v na ? 10 -4 /c min. nom. max. max. max. max. min. max. DZ23c2v7 v1 2.5 2.7 2.9 5 1 - - 75 (< 83) < 500 -9 -4 DZ23c3v0 v2 2.8 3.0 3.2 5 1 - - 80 (< 95) < 500 -9 -3 DZ23c3v3 v3 3.1 3.3 3.5 5 1 - - 80 (< 95) < 500 -8 -3 DZ23c3v6 v4 3.4 3.6 3.8 5 1 - - 80 (< 95) < 500 -8 -3 DZ23c3v9 v5 3.7 3.9 4.1 5 1 - - 80 (< 95) < 500 -7 -3 DZ23c4v3 v6 4 4.3 4.6 5 1 - - 80 (< 95) < 500 -6 -1 DZ23c4v7 v7 4.4 4.7 5 5 1 - - 70 (< 78) < 500 -5 2 DZ23c5v1 v8 4.8 5.1 5.4 5 1 > 0.8 100 30 (< 60) < 480 -3 4 DZ23c5v6 v9 5.2 5.6 6 5 1 > 1 100 10 (< 40) < 400 -2 6 DZ23c6v2 v10 5.8 6.2 6.6 5 1 > 2 100 4.8 (< 10) < 200 -1 7 DZ23c6v8 v11 6.4 6.8 7.2 5 1 > 3 100 4.5 (< 8) < 150 2 7 DZ23c7v5 v12 7 7.5 7.9 5 1 > 5 100 4 (< 7) < 50 3 7 DZ23c8v2 v13 7.7 8.2 8.7 5 1 > 6 100 4.5 (< 7) < 50 4 7 DZ23c9v1 v14 8.5 9.1 9.6 5 1 > 7 100 4.8 (< 10) < 50 5 8 DZ23c10 v15 9.4 10 10.6 5 1 > 7.5 100 5.2 (< 15) < 70 5 8 DZ23c11 v16 10.4 11 11.6 5 1 > 8.5 100 6 (< 20) < 70 5 9 DZ23c12 v17 11.4 12 12.7 5 1 > 9 100 7 (< 20) < 90 6 9 DZ23c13 v18 12.4 13 14.1 5 1 > 10 100 9 (< 25) < 110 7 9 DZ23c15 v19 13.8 15 15.6 5 1 > 11 100 11 (< 30) < 110 7 9 DZ23c16 v20 15.3 16 17.1 5 1 > 12 100 13 (< 40) < 170 8 9.5 DZ23c18 v21 16.8 18 19.1 5 1 > 14 100 18 (< 50) < 170 8 9.5 DZ23c20 v22 18.8 20 21.2 5 1 > 15 100 20 (< 50) < 220 8 10 DZ23c22 v23 20.8 22 23.3 5 1 > 17 100 25 (< 55) < 220 8 10 DZ23c24 v24 22.8 24 25.6 5 1 > 18 100 28 (< 80) < 220 8 10 DZ23c27 v25 25.1 27 28.9 5 1 > 20 100 30 (< 80) < 250 8 10 DZ23c30 v26 28 30 32 5 1 > 22.5 100 35 (< 80) < 250 8 10 DZ23c33 v27 31 33 35 5 1 > 25 100 40 (< 80) < 250 8 10 DZ23c36 v28 34 36 38 5 1 > 27 100 40 (< 90) < 250 8 10 DZ23c39 v29 37 39 41 5 1 > 29 100 50 (< 90) < 300 10 12 DZ23c43 v30 40 43 46 5 1 > 32 100 60 (< 100) < 700 10 12 DZ23c47 v31 44 47 50 5 1 > 35 100 70 (< 100) < 750 10 12 DZ23c51 v32 48 51 54 5 1 > 38 100 70 (< 100) < 750 10 12
DZ23-series www.vishay.com vishay semiconductors rev. 2.0, 08-nov-16 3 document number: 85765 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - forward characteristics fig. 2 - admissi b le power dissipation v s. am b ient temperature fig. 3 - dynamic resistance v s. zener current fig. 4 - dynamic resistance v s. zener current fig. 5 - dynamic resistance v s. zener current fig. 6 - thermal differential resistance v s. zener voltage 18114 ma 10 3 10 2 10 -1 10 -2 10 -3 10 -4 10 -5 10 1 i f v f 0 0.2 0.4 0.6 0.8 1 v t j = 100 c t j = 25 c 18115 mw 400 100 0 300 200 p tot t amb 0 100 200 c 500 18117 1000 5 4 3 2 5 4 3 2 100 1 r zj 0.1 25 25 110 i z t j = 25 c 2.7 5 4 3 2 10 25 100 ma 3.6 4.7 5.1 5.6 t j = 25 c 33 27 22 18 15 12 10 6.8/8.2 6.2 18120 10 3 7 5 4 3 2 7 5 4 3 2 10 0.1 2345 2345 110 ma r zj i z t j = 25 c 47 + 51 43 39 36 10 2 18121 10 3 5 4 3 2 5 4 3 2 10 2 1 r zth 5 4 3 2 10 1 2345 2345 10 100 v v z at i z = 5 ma negative positive v z t j r zth = r tha x v z x
DZ23-series www.vishay.com vishay semiconductors rev. 2.0, 08-nov-16 4 document number: 85765 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - dynamic resistance v s. zener voltage fig. 8 - temperature dependence of zener voltage v s. zener voltage fig. 9 - change of zener voltage v s. junction temperature fig. 10 - temperature dependence of zener voltage v s. zener voltage fig. 11 - change of zener voltage v s. junction temperature fig. 12 - change of zener voltage from turn-on up to the point of thermal equili b rium v s. zener v oltage 18122 100 7 5 4 3 2 7 5 4 3 2 1 r zj 10 t j = 25 c i z = 5 ma 1 2345 2345 10 100 v v z 18123 25 20 15 10 5 0 - 5 m v /c v z t j 1 2345 2345 10 100 v v z 5 ma 1 ma 20 ma i z = 18124 v z at i z = 5 ma 25 15 10 8 7 6.2 5.9 5.6 5.1 4.7 3.6 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 - 1 - 0.2 v z v t j 020406080 100 120 140 c 100 80 60 40 20 0 m v /c v z t j 0 20 40 80 60 100 v v z i z = 5 ma 18126 9 7 5 3 1 - 1 v v z 8 6 4 2 0 0 100 60 t j 20 40 120 80 140 c i z = 2 ma 51 43 36 18127 1.6 1.2 0.8 0.4 0 - 0.4 v v z 1.4 1 0.6 0.2 - 0.2 1 2345 2345 10 100 v v z at i z = 5 ma v z = r zth x i z
DZ23-series www.vishay.com vishay semiconductors rev. 2.0, 08-nov-16 5 document number: 85765 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 13 - change of zener voltage from turn-on up to the point of thermal equili b rium v s. zener v oltage fig. 14 - breakdown characteristics fig. 15 - breakdown characteristics fig. 16 - breakdown characteristics layout for r thja test thickness: fi berglass 0.059 " (1.5 mm) ? copper leads 0.012 " (0.3 mm) 18128 5 4 3 2 1 0 v v z 0 20 40 60 80 100 v v z i z = 5 ma i z = 2 ma v z = r zth x i z 18111 test c u rrent i z 5 ma 1 23456789 0 10 v v z 3.3 3.9 5.6 2.7 ma 50 40 30 20 10 0 l z t j = 25 c 8.2 6.8 4.7 18112 10 20 30 0 40 v v z ma 30 20 10 0 l z 33 test c u rrent i z 5 ma t j = 25 c 10 12 15 18 22 27 36 18113 ma 10 8 6 4 2 0 l z 10 20 30 40 50 60 70 80 90 0 100 v v z 43 39 test c u rrent i z 5 ma t j = 25 c 47 51 17451 15 (0.59) 12 (0.47) 0.8 (0.03) 5 (0.2) 7.5 (0.3) 3 (0.12) 1 (0.4) 1 (0.4) 2 (0.8) 2 (0.8) 1.5 (0.06) 5.1 (0.2)
DZ23-series www.vishay.com vishay semiconductors rev. 2.0, 08-nov-16 6 document number: 85765 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters (inches): sot-23 foot print recommendation: rev. 8 - date: 23. s ept.2009 17418 document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.95 (0.037) 0.95 (0.037) 2 (0.079) 0.7 (0.028) 0.9 (0.035) 0 to 8 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)
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